Parametric results for: tc55vcm216asgn55 under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

70 ns 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-G48 1

1 hit Apply

e2 1

1 hit Apply

12.4 mm 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Memory Density (1)

4.1943 Mbit 1

1 hit Apply

STANDARD SRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

48 1

1 hit Apply

262.144 k 1

1 hit Apply

256000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

256KX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP1 1

1 hit Apply

TSSOP48,.55,20 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

1 hit Apply