Datasheets
FDT458P by:

-30V P-Channel PowerTrench® MOSFET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL

Part Details for FDT458P by Fairchild Semiconductor Corporation

Overview of FDT458P by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDT458P

Part # Distributor Description Stock Price Buy
Bristol Electronics   10
RFQ
NexGen Digital   62
RFQ

Part Details for FDT458P

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FDT458P Part Data Attributes:

FDT458P Fairchild Semiconductor Corporation
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FDT458P Fairchild Semiconductor Corporation -30V P-Channel PowerTrench® MOSFET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-223
Pin Count 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.1 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDT458P

This table gives cross-reference parts and alternative options found for FDT458P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDT458P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDT458P 3.4A, 30V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC FDT458P vs FDT458P
FDT458P_NL Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT458P vs FDT458P_NL
Part Number Description Manufacturer Compare
NDT452APL84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT458P vs NDT452APL84Z
BSP250/T3 Power Field-Effect Transistor Nexperia FDT458P vs BSP250/T3
BSP250 Power Field-Effect Transistor Nexperia FDT458P vs BSP250
BSP250-TAPE-7 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors FDT458P vs BSP250-TAPE-7
934033450135 Power Field-Effect Transistor Nexperia FDT458P vs 934033450135
BSP250-T Power Field-Effect Transistor Nexperia FDT458P vs BSP250-T
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin NXP Semiconductors FDT458P vs BSP250,115
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia FDT458P vs BSP250,115
NDT452APD84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT458P vs NDT452APD84Z
NDT452AP/L99Z 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 Texas Instruments FDT458P vs NDT452AP/L99Z

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