Part Details for IRLR2905 by International Rectifier
Overview of IRLR2905 by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR2905
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 26 |
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RFQ | ||
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Bristol Electronics | 27 |
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Bristol Electronics | Min Qty: 5 | 16 |
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$1.1250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 20 |
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$1.0950 / $1.3688 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 21 |
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$0.4800 / $0.6000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 512 |
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$0.3640 / $1.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 12 |
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$1.2000 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 142 |
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$4.4084 / $7.1487 | Buy Now |
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NexGen Digital | 139 |
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Win Source Electronics | HEXFET Power MOSFET | 467320 |
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$0.2870 / $0.4300 | Buy Now |
Part Details for IRLR2905
IRLR2905 CAD Models
IRLR2905 Part Data Attributes:
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IRLR2905
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLR2905
International Rectifier
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE, AVALANCHE RATED, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR2905
This table gives cross-reference parts and alternative options found for IRLR2905. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR2905, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR2905TRPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2905 vs IRLR2905TRPBF |
| IRLR2905PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2905 vs IRLR2905PBF |
| IRLR2905 | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR2905 vs IRLR2905 |
| AUIRLR2905TRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | International Rectifier | IRLR2905 vs AUIRLR2905TRL |
| IRLR2905TRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2905 vs IRLR2905TRR |
| IRLR2905TR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2905 vs IRLR2905TR |
| AUIRLR2905TRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | Infineon Technologies AG | IRLR2905 vs AUIRLR2905TRL |
| IRLR2905TRLPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR2905 vs IRLR2905TRLPBF |
| IRLR2905TRRPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR2905 vs IRLR2905TRRPBF |
| IRLR2905PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR2905 vs IRLR2905PBF |