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Part Details for STN2NF10 by STMicroelectronics
Overview of STN2NF10 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STN2NF10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-8023-1-ND
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DigiKey | MOSFET N-CH 100V 2.4A SOT-223 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11384 In Stock |
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$0.3836 / $1.0200 | Buy Now |
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DISTI #
STN2NF10
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Avnet Americas | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN2NF10) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.3807 / $0.4332 | Buy Now |
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DISTI #
STN2NF10
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Avnet Americas | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN2NF10) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.4069 / $0.4244 | Buy Now |
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DISTI #
STN2NF10
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Avnet Americas | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN2NF10) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0 |
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RFQ | |
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DISTI #
88K0266
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Avnet Americas | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 88K0266) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 2632 Partner Stock |
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$0.7030 / $1.3200 | Buy Now |
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DISTI #
511-STN2NF10
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Mouser Electronics | MOSFET N-Ch 100 Volt 2 Amp RoHS: Compliant | 3235 |
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$0.4220 / $1.0900 | Buy Now |
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STMicroelectronics | N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package RoHS: Compliant Min Qty: 1 | 3235 |
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$0.5700 / $1.0700 | Buy Now |
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Future Electronics | N-Channel 100 V 0.26 Ohm Surface Mount STripFET II Power MosFet -SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 24000Reel |
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$0.1250 / $0.1330 | Buy Now |
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Future Electronics | N-Channel 100 V 0.26 Ohm Surface Mount STripFET II Power MosFet -SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.4150 / $0.4300 | Buy Now |
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Future Electronics | N-Channel 100 V 0.26 Ohm Surface Mount STripFET II Power MosFet -SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.4150 / $0.4300 | Buy Now |
Part Details for STN2NF10
STN2NF10 CAD Models
STN2NF10 Part Data Attributes
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STN2NF10
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STN2NF10
STMicroelectronics
N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT-223 | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.26 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STN2NF10
This table gives cross-reference parts and alternative options found for STN2NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STN2NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFL110PBF | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Vishay Intertechnologies | STN2NF10 vs IRFL110PBF |
| BSP372L6327HTSA1 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | STN2NF10 vs BSP372L6327HTSA1 |
| IRLM120ATF | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | STN2NF10 vs IRLM120ATF |
| IRLM120ATF_NL | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | STN2NF10 vs IRLM120ATF_NL |
| IRFL4310PBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | STN2NF10 vs IRFL4310PBF |
| IRFL110 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Vishay Siliconix | STN2NF10 vs IRFL110 |
| IRFL4310TRPBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | STN2NF10 vs IRFL4310TRPBF |
| BSP372 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | STN2NF10 vs BSP372 |
| IRFL4310TRPBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Infineon Technologies AG | STN2NF10 vs IRFL4310TRPBF |
| PMV213SN | Small Signal Field-Effect Transistor | Nexperia | STN2NF10 vs PMV213SN |