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K7P801822B-HC160
Samsung Semiconductor
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Check for Price | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 3 ns | STANDARD SRAM | PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, | 119 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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K7P403611A-H2500
Samsung Semiconductor
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Check for Price | Active | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 2 ns | STANDARD SRAM | PIPELINED ARCHITECTURE, SEATED HT-CALCULATED | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 2.2 mm | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||||
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K7P163666M-HC25
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 2 ns | 250 MHz | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 150 mA | 2.37 V | 550 µA | 2.63 V | 2.37 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.55 mm | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, BGA119,7X17,50 | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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K7P801811M-HC21
Samsung Semiconductor
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Check for Price | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 2 ns | STANDARD SRAM | PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, | 119 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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K7P401811A-H25
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 2 ns | STANDARD SRAM | ALSO REQUIRES 1.5V I/O SUPPLY | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | SERIAL | 60 mA | 3.15 V | 550 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn/Pb) | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, BGA119,7X17,50 | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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K7P803611M-HC210
Samsung Semiconductor
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Check for Price | No | Obsolete | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 2 ns | STANDARD SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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K7P403622M-HC190
Samsung Semiconductor
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Check for Price | No | Active | 4.7186 Mbit | 36 | 128KX36 | 3.5 ns | LATE-WRITE SRAM | COMMON | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 3.15 V | 550 µA | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||||
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K7P403623B-H65
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 6.5 ns | STANDARD SRAM | PIPELINED ARCHITECTURE, SEATED HT-CALCULATED | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 120 mA | 3.15 V | 300 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | HBGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.2 mm | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | HBGA, BGA119,7X17,50 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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K7P321874C-HC300
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 2.5 V | 1.6 ns | 300 MHz | LATE-WRITE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 2.37 V | 570 µA | 2.63 V | 2.37 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.21 mm | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, BGA119,7X17,50 | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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K7P803666M-HC21
Samsung Semiconductor
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Check for Price | Obsolete | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 2 ns | STANDARD SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.65 V | 2.35 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, | 119 | unknown | 3A991.B.2.A | 8542.32.00.41 |