1.5KE30A/4 vs 3Z30 feature comparison

1.5KE30A/4 Vishay Semiconductors

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3Z30 Toshiba America Electronic Components

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 31.5 V 33 V
Breakdown Voltage-Min 28.5 V 27 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 25.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE
Breakdown Voltage-Nom 30 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 10 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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