1N5610
vs
1.5SMC8.2A-E3/57T
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
HERMETICALLY SEALED, GLASS PACKAGE-2
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| Factory Lead Time |
21 Weeks
|
8 Weeks
|
| Additional Feature |
HIGH RELIABILITY, METALLURGICALLY BONDED
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Min |
33 V
|
7.79 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
R-PDSO-C2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
6.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30.5 V
|
7.02 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD OVER NICKEL
|
Matte Tin (Sn)
|
| Terminal Form |
WIRE
|
C BEND
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
6
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Breakdown Voltage-Max |
|
8.61 V
|
| Breakdown Voltage-Nom |
|
8.2 V
|
| Clamping Voltage-Max |
|
12.1 V
|
| JEDEC-95 Code |
|
DO-214AB
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 1N5610 with alternatives
Compare 1.5SMC8.2A-E3/57T with alternatives