1N5622USV vs 1SS352TPHR2 feature comparison

1N5622USV Sensitron Semiconductors

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1SS352TPHR2 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SENSITRON SEMICONDUCTOR TOSHIBA CORP
Package Description O-MELF-N2 R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.70
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-MELF-N2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A 0.1 A
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 2 µs 0.004 µs
Surface Mount YES YES
Terminal Form NO LEAD GULL WING
Terminal Position END DUAL
Base Number Matches 1 1
Application FAST RECOVERY
Forward Voltage-Max (VF) 1.2 V
Non-rep Pk Forward Current-Max 1 A
Number of Phases 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 85 V
Reverse Current-Max 0.5 µA
Reverse Test Voltage 80 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N5622USV with alternatives

Compare 1SS352TPHR2 with alternatives