1N6116A
vs
JANTXV1N6112A
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
STMICROELECTRONICS
|
SENSITRON SEMICONDUCTOR
|
Package Description |
GLASS, CB-431, 2 PIN
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Max |
28.3 V
|
|
Breakdown Voltage-Min |
25.7 V
|
17.1 V
|
Breakdown Voltage-Nom |
27 V
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
37.4 V
|
25.1 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
E-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ELLIPTICAL
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
|
Rep Pk Reverse Voltage-Max |
20.6 V
|
13.7 V
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
11
|
9
|
Operating Temperature-Min |
|
-55 °C
|
Qualification Status |
|
Qualified
|
Reference Standard |
|
MIL-19500
|
Reverse Current-Max |
|
1 µA
|
|
|
|
Compare 1N6116A with alternatives
Compare JANTXV1N6112A with alternatives