1N6511
vs
1N6511E3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, CERAMIC, DIP-14
|
R-CDIP-T14
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
22 Weeks
|
|
| Breakdown Voltage-Min |
75 V
|
|
| Configuration |
SEPARATE, 7 ELEMENTS
|
SEPARATE, 7 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
7
|
7
|
| Number of Terminals |
14
|
14
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.6 W
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
65 V
|
|
| Reverse Current-Max |
0.025 µA
|
|
| Reverse Recovery Time-Max |
0.005 µs
|
|
| Reverse Test Voltage |
20 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
3
|
2
|
| Additional Feature |
|
HIGH RELIABILITY
|
|
|
|
Compare 1N6511 with alternatives
Compare 1N6511E3 with alternatives