1N6511E3
vs
1N6511
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
R-CDIP-T14
|
HERMETIC SEALED, CERAMIC, DIP-14
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
HIGH RELIABILITY
|
|
Configuration |
SEPARATE, 7 ELEMENTS
|
SEPARATE, 7 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
Number of Elements |
7
|
7
|
Number of Terminals |
14
|
14
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
2
|
3
|
Rohs Code |
|
No
|
Factory Lead Time |
|
22 Weeks
|
Breakdown Voltage-Min |
|
75 V
|
Forward Voltage-Max (VF) |
|
1 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation-Max |
|
0.6 W
|
Qualification Status |
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
|
65 V
|
Reverse Current-Max |
|
0.025 µA
|
Reverse Recovery Time-Max |
|
0.005 µs
|
Reverse Test Voltage |
|
20 V
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N6511E3 with alternatives
Compare 1N6511 with alternatives