1N821-1E3
vs
1N821E3
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
DO-35
|
|
| Package Description |
DO-35, 2 PIN
|
DIE-3
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
15 Ω
|
|
| JEDEC-95 Code |
DO-204AH
|
DO-204AH
|
| JESD-30 Code |
O-LALF-W2
|
S-XXSS-N3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
SQUARE
|
| Package Style |
LONG FORM
|
SPECIAL SHAPE
|
| Power Dissipation-Max |
0.5 W
|
0.475 W
|
| Reference Standard |
MIL-19500
|
|
| Reference Voltage-Nom |
6.2 V
|
6.2 V
|
| Reverse Current-Max |
2 µA
|
|
| Reverse Test Voltage |
3 V
|
|
| Surface Mount |
NO
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
NO LEAD
|
| Terminal Position |
AXIAL
|
UNSPECIFIED
|
| Voltage Temp Coeff-Max |
0.62 mV/°C
|
0.62 mV/°C
|
| Voltage Tol-Max |
5%
|
4.84%
|
| Working Test Current |
7.5 mA
|
|
| Base Number Matches |
2
|
2
|
| Factory Lead Time |
|
26 Weeks
|
|
|
|
Compare 1N821-1E3 with alternatives
Compare 1N821E3 with alternatives