1SS307TE85L2 vs NTE585 feature comparison

1SS307TE85L2 Toshiba America Electronic Components

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NTE585 NTE Electronics Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP NTE ELECTRONICS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.80
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 0.6 V
JESD-30 Code R-PDSO-G3 O-XALF-W2
Non-rep Pk Forward Current-Max 1 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.1 A 1 A
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Power Dissipation-Max 0.15 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 1
Rohs Code Yes
Package Description O-XALF-W2
Samacsys Manufacturer NTE ELECTRONICS
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 40 V
Technology SCHOTTKY
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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