2N7002-AU_R1_000A1 vs 2N7002H6327 feature comparison

2N7002-AU_R1_000A1 PanJit Semiconductor

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2N7002H6327 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC INFINEON TECHNOLOGIES AG
Package Description , GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature ULTRA LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.3 A 0.3 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF 3 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 0.5 W 0.5 W
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 3
Samacsys Manufacturer Infineon
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish TIN

Compare 2N7002-AU_R1_000A1 with alternatives

Compare 2N7002H6327 with alternatives