2N7002-AU_R1_000A1
vs
2N7002E-T1
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
VISHAY SILICONIX
|
Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Additional Feature |
ULTRA LOW RESISTANCE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.3 A
|
0.24 A
|
Drain-source On Resistance-Max |
3 Ω
|
3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
8 pF
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.5 W
|
|
Power Dissipation-Max (Abs) |
0.5 W
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
SOT-23
|
Pin Count |
|
3
|
Samacsys Manufacturer |
|
Vishay
|
JEDEC-95 Code |
|
TO-236
|
JESD-609 Code |
|
e0
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N7002-AU_R1_000A1 with alternatives
Compare 2N7002E-T1 with alternatives