3Z30 vs 1.5KE30-G feature comparison

3Z30 Toshiba America Electronic Components

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1.5KE30-G Sensitron Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP SENSITRON SEMICONDUCTOR
Reach Compliance Code unknown compliant
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE
Breakdown Voltage-Max 33 V 33 V
Breakdown Voltage-Min 27 V 27 V
Breakdown Voltage-Nom 30 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 10 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 4 2
Pbfree Code Yes
Part Package Code DO-201AE
Package Description O-PALF-W2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-201AE
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 24.3 V

Compare 3Z30 with alternatives

Compare 1.5KE30-G with alternatives