6308-1NXXXX vs N82LS135NB feature comparison

6308-1NXXXX Monolithic Memories (RETIRED)

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N82LS135NB NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MONOLITHIC MEMORIES SIGNETICS CORP
Reach Compliance Code unknown unknown
Access Time-Max 50 ns 100 ns
JESD-30 Code R-PDIP-T20 R-PDIP-T20
Memory Density 8192 bit 2048 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 4 8
Number of Functions 1 1
Number of Terminals 20 20
Number of Words 256 words 256 words
Number of Words Code 2000 256
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 75 °C
Operating Temperature-Min
Organization 2KX4 256X8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.15 mA 0.1 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS BIPOLAR
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL EXTENDED
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Package Description DIP, DIP20,.3
ECCN Code EAR99
HTS Code 8542.32.00.71
JESD-609 Code e0
Output Characteristics 3-STATE
Package Code DIP
Package Equivalence Code DIP20,.3
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Pitch 2.54 mm

Compare 6308-1NXXXX with alternatives

Compare N82LS135NB with alternatives