AT45DB641E-MWHN-T vs S25FL064LABNFA010 feature comparison

AT45DB641E-MWHN-T Renesas Electronics Corporation

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S25FL064LABNFA010 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Part Package Code DFN
Reach Compliance Code compliant compliant
Factory Lead Time 18 Weeks 4 Weeks
Samacsys Manufacturer Renesas Electronics Infineon
Clock Frequency-Max (fCLK) 85 MHz 108 MHz
JESD-30 Code R-PDSO-N8 S-PDSO-N8
JESD-609 Code e4 e3
Length 8 mm 4 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type FLASH FLASH
Memory Width 1 8
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 67108864 words 8388608 words
Number of Words Code 64000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX1 8MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code HVSON HVSON
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Programming Voltage 1.8 V 3 V
Seated Height-Max 1 mm 0.6 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 1.7 V 2.7 V
Supply Voltage-Nom (Vsup) 2.3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish NICKEL PALLADIUM GOLD Matte Tin (Sn)
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 0.8 mm
Terminal Position DUAL DUAL
Width 6 mm 4 mm
Base Number Matches 1 1
Additional Feature IT ALSO HAVE X1 MEMORY WIDTH
Alternate Memory Width 2
Output Characteristics 3-STATE
Screening Level AEC-Q100
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare AT45DB641E-MWHN-T with alternatives

Compare S25FL064LABNFA010 with alternatives