BAS29 vs BAS29212 feature comparison

BAS29 Texas Instruments

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BAS29212 NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Active
Package Description R-Pdso-G3
Reach Compliance Code Unknown Unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Configuration Single Single
Diode Element Material Silicon Silicon
Diode Type Rectifier Diode Rectifier Diode
Forward Voltage-Max (VF) 0.84 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Non-rep Pk Forward Current-Max 3 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A
Package Body Material Plastic/Epoxy Plastic/Epoxy
Package Shape Rectangular Rectangular
Package Style Small Outline Small Outline
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 120 V 110 V
Reverse Recovery Time-Max 0.05 µS 0.05 µS
Surface Mount Yes Yes
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form Gull Wing Gull Wing
Terminal Position Dual Dual
Base Number Matches 16 1
Application General Purpose
Power Dissipation-Max 0.25 W
Technology Avalanche