BAS29235 vs BAS29-T feature comparison

BAS29235 NXP Semiconductors

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BAS29-T NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOT-23
Package Description R-PDSO-G3
Pin Count 3
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Non-rep Pk Forward Current-Max 3 A
Output Current-Max 0.25 A
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.1 µA
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

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