BAS29235 vs BAS29-T feature comparison

BAS29235 NXP Semiconductors

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BAS29-T NXP Semiconductors

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Part Life Cycle Code Active Transferred
Reach Compliance Code Unknown Compliant
ECCN Code EAR99 EAR99
Application General Purpose
Breakdown Voltage-Min 120 V
Configuration Single Single
Diode Element Material Silicon Silicon
Diode Type Rectifier Diode Rectifier Diode
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 10 A 3 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material Plastic/Epoxy Plastic/Epoxy
Package Shape Rectangular Rectangular
Package Style Small Outline Small Outline
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Reference Standard Iec-134
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.05 µS 0.05 µS
Reverse Test Voltage 90 V
Surface Mount Yes Yes
Technology Avalanche Avalanche
Terminal Form Gull Wing Gull Wing
Terminal Position Dual Dual
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOT-23
Package Description Plastic Package-3
Pin Count 3
HTS Code 8541.10.00.70
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40