BAS29T/R vs BAS29S62Z feature comparison

BAS29T/R NXP Semiconductors

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BAS29S62Z Texas Instruments

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Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NATIONAL SEMICONDUCTOR CORP
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3 R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Non-rep Pk Forward Current-Max 3 A
Number of Elements 1
Number of Phases 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Output Current-Max 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 90 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 3 2

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