Part Details for BAS29T/R by NXP Semiconductors
Overview of BAS29T/R by NXP Semiconductors
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- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for BAS29T/R
BAS29T/R CAD Models
BAS29T/R Part Data Attributes
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BAS29T/R
NXP Semiconductors
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Datasheet
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BAS29T/R
NXP Semiconductors
DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-23 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.25 V | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Non-rep Pk Forward Current-Max | 3 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Output Current-Max | 0.25 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power Dissipation-Max | 0.25 W | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 110 V | |
| Reverse Current-Max | 0.1 µA | |
| Reverse Recovery Time-Max | 0.05 µs | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
Alternate Parts for BAS29T/R
This table gives cross-reference parts and alternative options found for BAS29T/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BAS29T/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BAS29 | General Purpose High Voltage Diode, 3000-REEL | onsemi | BAS29T/R vs BAS29 |
| 933723180215 | 0.25A, 110V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN | NXP Semiconductors | BAS29T/R vs 933723180215 |
| BAS29,215 | BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin | NXP Semiconductors | BAS29T/R vs BAS29,215 |
| BAS29212 | DIODE 110 V, SILICON, SIGNAL DIODE, Signal Diode | NXP Semiconductors | BAS29T/R vs BAS29212 |
| BAS29235 | DIODE 110 V, SILICON, SIGNAL DIODE, Signal Diode | NXP Semiconductors | BAS29T/R vs BAS29235 |
| BAS29-T | Rectifier Diode | Nexperia | BAS29T/R vs BAS29-T |
| BAS29-T | DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode | NXP Semiconductors | BAS29T/R vs BAS29-T |
| BAS29 | Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon | Fairchild Semiconductor Corporation | BAS29T/R vs BAS29 |