BAS29T/R vs MMBD4448H-7 feature comparison

BAS29T/R NXP Semiconductors

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MMBD4448H-7 Diodes Incorporated

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Part Package Code SOT-23
Package Description Plastic Package-3 R-Pdso-G3
Pin Count 3 3
Reach Compliance Code Unknown Not Compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration Single Single
Diode Element Material Silicon Silicon
Diode Type Rectifier Diode Rectifier Diode
Forward Voltage-Max (VF) 1.25 V 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Non-rep Pk Forward Current-Max 3 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material Plastic/Epoxy Plastic/Epoxy
Package Shape Rectangular Rectangular
Package Style Small Outline Small Outline
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 80 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.05 µS 0.004 µS
Surface Mount Yes Yes
Technology Avalanche
Terminal Finish Matte Tin (Sn) Tin Lead
Terminal Form Gull Wing Gull Wing
Terminal Position Dual Dual
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 3 1
Application General Purpose
Breakdown Voltage-Min 80 V
Operating Temperature-Min -65 °C
Reverse Test Voltage 70 V