We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

BAS29TRL vs BAS29212 feature comparison

BAS29TRL YAGEO Corporation

Buy Now Datasheet

BAS29212 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Output Current-Max 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Operating Temperature-Max 150 °C
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 110 V
Technology AVALANCHE
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

Compare BAS29TRL with alternatives

Compare BAS29212 with alternatives