BB215TRL vs 1SV277 feature comparison

BB215TRL YAGEO Corporation

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1SV277 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer PHILIPS COMPONENTS TOSHIBA CORP
Package Description O-LELF-R2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 10 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 7.6 2
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code O-LELF-R2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form WRAP AROUND GULL WING
Terminal Position END DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 2 1
Pbfree Code No
Rohs Code Yes
Part Package Code SOD
Pin Count 2
Samacsys Manufacturer Toshiba
Diode Cap Tolerance 10.11%
Diode Capacitance-Nom 4.5 pF
Operating Temperature-Max 125 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 10 V
Reverse Current-Max 0.003 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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