BR3501(W) vs SB351GM feature comparison

BR3501(W) Galaxy Microelectronics

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SB351GM Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 100 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Base Number Matches 2 1
Case Connection ISOLATED
Moisture Sensitivity Level 1

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