DB101S vs FDB101S feature comparison

DB101S Galaxy Microelectronics

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FDB101S Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount YES YES
Base Number Matches 3 1

Compare DB101S with alternatives

Compare FDB101S with alternatives