DG191AP/883B
vs
TL191CN
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
TEXAS INSTRUMENTS INC
|
| Package Description |
DIP, DIP16,.3
|
DIP, DIP16,.3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Analog IC - Other Type |
SPDT
|
SPDT
|
| JESD-30 Code |
R-GDIP-T16
|
R-PDIP-T16
|
| JESD-609 Code |
e0
|
|
| Neg Supply Voltage-Nom (Vsup) |
-15 V
|
-15 V
|
| Number of Channels |
1
|
1
|
| Number of Functions |
2
|
2
|
| Number of Terminals |
16
|
16
|
| Off-state Isolation-Nom |
50 dB
|
|
| On-state Resistance-Max (Ron) |
75 Ω
|
150 Ω
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output |
SEPARATE OUTPUT
|
SEPARATE OUTPUT
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP16,.3
|
DIP16,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Nom (Vsup) |
15 V
|
15 V
|
| Surface Mount |
NO
|
NO
|
| Switch-off Time-Max |
130 ns
|
|
| Switch-on Time-Max |
250 ns
|
|
| Switching |
BREAK-BEFORE-MAKE
|
BREAK-BEFORE-MAKE
|
| Technology |
JFET
|
BIMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
3
|
| Length |
|
19.305 mm
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Seated Height-Max |
|
5.08 mm
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Width |
|
7.62 mm
|
|
|
|
Compare DG191AP/883B with alternatives
Compare TL191CN with alternatives