DLE30E vs BYT56G(Z) feature comparison

DLE30E Galaxy Microelectronics

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BYT56G(Z) Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.4 V
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 0.035 µs 0.1 µs
Surface Mount NO NO
Base Number Matches 1 1

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