EM6A8160TSC-5G vs M13S64164A-4BVAG2Y feature comparison

EM6A8160TSC-5G Etron Technology Inc

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M13S64164A-4BVAG2Y Elite Semiconductor Memory Technology Inc

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer ETRON TECHNOLOGY INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description TSOP2, TFBGA,
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO REFRESH
JESD-30 Code R-PDSO-G66 R-PBGA-B60
Length 22.22 mm 13 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type DDR DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 66 60
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 105 °C
Operating Temperature-Min -40 °C
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form GULL WING BALL
Terminal Pitch 0.65 mm 0.8 mm
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm 8 mm
Base Number Matches 1 1

Compare EM6A8160TSC-5G with alternatives

Compare M13S64164A-4BVAG2Y with alternatives