ESD8451MUT5G
vs
PUSB3F4-TBR,115
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Part Package Code |
X3DFN2, 0.62x0.32, 0.355P, (0201)
|
DFN
|
| Package Description |
X3DFN2, 2 PIN
|
|
| Pin Count |
2
|
10
|
| Manufacturer Package Code |
152AF
|
SOT1176-1
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Factory Lead Time |
54 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Additional Feature |
LOW CAPACITANCE
|
|
| Breakdown Voltage-Max |
8.3 V
|
|
| Breakdown Voltage-Min |
5.5 V
|
|
| Breakdown Voltage-Nom |
7.9 V
|
7.5 V
|
| Clamping Voltage-Max |
19 V
|
8 V
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PBCC-N2
|
|
| JESD-609 Code |
e4
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
CHIP CARRIER
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Reference Standard |
IEC-61000-4-2
|
|
| Rep Pk Reverse Voltage-Max |
3.3 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
Nickel/Palladium/Gold (Ni/Pd/Au)
|
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
BOTTOM
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
|
|
|
Compare ESD8451MUT5G with alternatives
Compare PUSB3F4-TBR,115 with alternatives