GBJ2008 vs TS20P06G feature comparison

GBJ2008 HY Electronic Corp

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TS20P06G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer HY ELECTRONIC CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
Non-rep Pk Forward Current-Max 260 A 250 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3.6 A 20 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Current-Max 10 µA
Reverse Test Voltage 800 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 13
Rohs Code Yes
Package Description R-PSFM-T4
Factory Lead Time 6 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Case Connection ISOLATED
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish Matte Tin (Sn)

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