GBJ2008
vs
GSIB2080N-M3/45
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
800 V
|
800 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.05 V
|
1 V
|
| JESD-30 Code |
R-PSFM-T4
|
R-PSFM-T4
|
| Non-rep Pk Forward Current-Max |
240 A
|
240 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
20 A
|
3.5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
R-PSFM-T4
|
| Samacsys Manufacturer |
|
Vishay
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare GBJ2008 with alternatives
Compare GSIB2080N-M3/45 with alternatives