GBL10C2
vs
GBJ4M
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Breakdown Voltage-Min |
1000 V
|
1000 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| JESD-30 Code |
R-PSIP-T4
|
|
| JESD-609 Code |
e3
|
|
| Non-rep Pk Forward Current-Max |
150 A
|
150 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
3 A
|
4 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
1
|
10
|
|
|
|
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