GE28F640W18BD60B vs K8A6315EBC-DC7E0 feature comparison

GE28F640W18BD60B Intel Corporation

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K8A6315EBC-DC7E0 Samsung Semiconductor

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Pbfree Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTEL CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 9 X 7.70 MM, 1 MM HEIGHT, VFBGA-56 TFBGA,
Pin Count 56 88
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 60 ns 70 ns
Additional Feature SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot Block BOTTOM BOTTOM
JESD-30 Code R-PBGA-B56 R-PBGA-B88
Length 9 mm 11 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 56 88
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm 1.1 mm
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NOR TYPE
Width 7.7 mm 8 mm
Base Number Matches 1 1

Compare GE28F640W18BD60B with alternatives

Compare K8A6315EBC-DC7E0 with alternatives