IS42S16160J-7BL
vs
ECS2516AFCN-A-Y3
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
ELPIDA MEMORY INC
|
Package Description |
TFBGA,
|
DIE,
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Factory Lead Time |
8 Weeks
|
|
Samacsys Manufacturer |
Integrated Silicon Solution Inc.
|
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
5.4 ns
|
5.4 ns
|
Additional Feature |
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
S-PBGA-B54
|
R-XUUC-N
|
JESD-609 Code |
e1
|
|
Length |
8 mm
|
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
54
|
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
|
Organization |
16MX16
|
16MX16
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Code |
TFBGA
|
DIE
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
UNCASED CHIP
|
Peak Reflow Temperature (Cel) |
260
|
|
Seated Height-Max |
1.2 mm
|
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
OTHER
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
BALL
|
NO LEAD
|
Terminal Pitch |
0.8 mm
|
|
Terminal Position |
BOTTOM
|
UPPER
|
Width |
8 mm
|
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
DIE
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IS42S16160J-7BL with alternatives
Compare ECS2516AFCN-A-Y3 with alternatives