JAN1N6133 vs MAP6KE130AE3 feature comparison

JAN1N6133 Semicoa Semiconductors

Buy Now

MAP6KE130AE3 Microchip Technology Inc

Buy Now Datasheet
Pbfree Code No
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer SEMICOA CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 117.325 V 124 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 8 2
Rohs Code Yes
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Factory Lead Time 40 Weeks
Breakdown Voltage-Max 137 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 111 V

Compare JAN1N6133 with alternatives

Compare MAP6KE130AE3 with alternatives