JANS1N5806
vs
1N5806
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SOLID STATE DEVICES INC
|
SEMITRONICS CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Application |
ULTRA FAST RECOVERY POWER
|
EFFICIENCY
|
| Breakdown Voltage-Min |
160 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-XALF-W2
|
|
| Non-rep Pk Forward Current-Max |
35 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
2.5 A
|
2.5 A
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
1
|
1
|
| Forward Voltage-Max (VF) |
|
0.875 V
|
|
|
|
Compare JANS1N5806 with alternatives
Compare 1N5806 with alternatives