K4H511638J-BPB30
vs
H5DU5162EFR-L2I
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SK HYNIX INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TBGA, BGA60,9X12,40/32
|
VBGA, BGA60,9X12,40/32
|
| Pin Count |
60
|
60
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.7 ns
|
0.75 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| Clock Frequency-Max (fCLK) |
166 MHz
|
100 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
2,4,8
|
2,4,8
|
| JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
| Length |
12 mm
|
12 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR1 DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
60
|
60
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
32MX16
|
32MX16
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TBGA
|
VBGA
|
| Package Equivalence Code |
BGA60,9X12,40/32
|
BGA60,9X12,40/32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, VERY THIN PROFILE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
8192
|
8192
|
| Seated Height-Max |
1.2 mm
|
1 mm
|
| Self Refresh |
YES
|
YES
|
| Sequential Burst Length |
2,4,8
|
2,4,8
|
| Standby Current-Max |
0.005 A
|
|
| Supply Current-Max |
0.2 mA
|
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
9 mm
|
8 mm
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e1
|
| Terminal Finish |
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Time@Peak Reflow Temperature-Max (s) |
|
20
|
|
|
|
Compare K4H511638J-BPB30 with alternatives
Compare H5DU5162EFR-L2I with alternatives