Part Details for K4H511638J-BPB30 by Samsung Semiconductor
Overview of K4H511638J-BPB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
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Consumer Electronics
Computing and Data Storage
Part Details for K4H511638J-BPB30
K4H511638J-BPB30 CAD Models
K4H511638J-BPB30 Part Data Attributes:
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K4H511638J-BPB30
Samsung Semiconductor
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Datasheet
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K4H511638J-BPB30
Samsung Semiconductor
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TBGA, BGA60,9X12,40/32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 12 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TBGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 9 mm |
Alternate Parts for K4H511638J-BPB30
This table gives cross-reference parts and alternative options found for K4H511638J-BPB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638J-BPB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V32M16FN-6LIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638J-BPB30 vs MT46V32M16FN-6LIT:F |
| K4H511638C-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H511638J-BPB30 vs K4H511638C-ZPB30 |
| MT46V32M16BN-6IT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | K4H511638J-BPB30 vs MT46V32M16BN-6IT:D |
| K4H511638D-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H511638J-BPB30 vs K4H511638D-ZPB30 |
| K4H511638C-ZIB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H511638J-BPB30 vs K4H511638C-ZIB30 |
| K4H511638J-BIB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H511638J-BPB30 vs K4H511638J-BIB30 |
| MT46V32M16BN-6LIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638J-BPB30 vs MT46V32M16BN-6LIT:F |
| MT46V32M16FN-6LIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | K4H511638J-BPB30 vs MT46V32M16FN-6LIT:D |
| MT46V32M16FN-6IT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638J-BPB30 vs MT46V32M16FN-6IT:F |
| NT5DS32M16BG-6KI | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60 | Nanya Technology Corporation | K4H511638J-BPB30 vs NT5DS32M16BG-6KI |