K5A3340YBC-T7550 vs MB84VD21184DA-85PBS feature comparison

K5A3340YBC-T7550 Samsung Semiconductor

Buy Now Datasheet

MB84VD21184DA-85PBS FUJITSU Limited

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC FUJITSU LTD
Part Package Code BGA BGA
Package Description TFBGA, LFBGA, BGA69,10X10,32
Pin Count 69 69
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Additional Feature SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8
JESD-30 Code R-PBGA-B69 R-PBGA-B69
Length 11 mm 11 mm
Memory Density 33554432 bit 16777216 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 69 69
Number of Words 2097152 words 1048576 words
Number of Words Code 2000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -25 °C
Organization 2MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA LFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.4 mm
Supply Voltage-Max (Vsup) 3.3 V 3.3 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 2
Rohs Code No
Access Time-Max 85 ns
JESD-609 Code e0
Mixed Memory Type FLASH+SRAM
Package Equivalence Code BGA69,10X10,32
Supply Current-Max 0.05 mA
Terminal Finish TIN LEAD

Compare K5A3340YBC-T7550 with alternatives

Compare MB84VD21184DA-85PBS with alternatives