MJD44H11T5
vs
MJD44H11-T1
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
PLASTIC, CASE 369C-01, DPAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 369C-01
|
|
Reach Compliance Code |
unknown
|
unknown
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
8 A
|
8 A
|
Collector-Emitter Voltage-Max |
80 V
|
80 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
40
|
40
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
240
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
85 MHz
|
50 MHz
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.75
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
20 W
|
VCEsat-Max |
|
1 V
|
|
|
|
Compare MJD44H11T5 with alternatives
Compare MJD44H11-T1 with alternatives