MMBD4448 vs LBAT46JT1G feature comparison

MMBD4448 International Semiconductor Inc

Buy Now Datasheet

LBAT46JT1G LRC Leshan Radio Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC LESHAN RADIO CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PDSO-G3 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 200 °C 150 °C
Output Current-Max 0.2 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 100 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 21 1
Package Description R-PDSO-G2
Technology SCHOTTKY

Compare MMBD4448 with alternatives

Compare LBAT46JT1G with alternatives