MMBZ15VDLT1G
vs
MMBZ15VAWT1G
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
SC-70
|
| Package Description |
TO-236, 3 PIN
|
R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
318-08
|
CASE 419-04
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
62 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Diode Type |
ZENER DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
|
| Terminal Finish |
MATTE TIN
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
Yes
|
| Breakdown Voltage-Max |
|
15.75 V
|
| Breakdown Voltage-Min |
|
14.25 V
|
| Breakdown Voltage-Nom |
|
15 V
|
| Clamping Voltage-Max |
|
21 V
|
| Configuration |
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
0.9 V
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Non-rep Peak Rev Power Dis-Max |
|
40 W
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
0.2 W
|
| Rep Pk Reverse Voltage-Max |
|
12 V
|
| Reverse Current-Max |
|
0.05 µA
|
| Reverse Test Voltage |
|
12 V
|
| Surface Mount |
|
YES
|
| Technology |
|
ZENER
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare MMBZ15VDLT1G with alternatives
Compare MMBZ15VAWT1G with alternatives