MPLAD36KP110CA vs MPLAD36KP110CAE3 feature comparison

MPLAD36KP110CA Microchip Technology Inc

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MPLAD36KP110CAE3 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 135 V 135 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 128.5 V 128.5 V
Clamping Voltage-Max 177 V 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 36000 W 36000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Current-Max 10 µA 10 µA
Reverse Test Voltage 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1

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