MT29F8G08ABACAH4:C
vs
W29N08GVBIAA
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
WINBOND ELECTRONICS CORP
|
| Package Description |
TFBGA, BGA63,10X12,32
|
VFBGA, BGA63,10X12,32
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Samacsys Manufacturer |
Micron
|
Winbond
|
| Command User Interface |
YES
|
NO
|
| Data Polling |
NO
|
NO
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| Length |
11 mm
|
11 mm
|
| Memory Density |
8589934592 bit
|
8589934592 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Sectors/Size |
4K
|
8K
|
| Number of Terminals |
63
|
63
|
| Number of Words |
1073741824 words
|
1073741824 words
|
| Number of Words Code |
1000000000
|
1000000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
1GX8
|
1GX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
VFBGA
|
| Package Equivalence Code |
BGA63,10X12,32
|
BGA63,10X12,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Page Size |
4K words
|
2K words
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
|
| Ready/Busy |
YES
|
YES
|
| Seated Height-Max |
1 mm
|
1 mm
|
| Sector Size |
256K
|
128K
|
| Standby Current-Max |
0.0001 A
|
0.0002 A
|
| Supply Current-Max |
0.035 mA
|
0.35 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Toggle Bit |
NO
|
YES
|
| Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
| Width |
9 mm
|
9 mm
|
| Base Number Matches |
1
|
1
|
| Alternate Memory Width |
|
1
|
| Data Retention Time-Min |
|
10
|
| Endurance |
|
100000 Write/Erase Cycles
|
| Output Characteristics |
|
3-STATE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Programming Voltage |
|
3 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare MT29F8G08ABACAH4:C with alternatives
Compare W29N08GVBIAA with alternatives