MX0912B251Y,114
vs
MRF1150M
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MOTOROLA INC
|
| Part Package Code |
DFM
|
|
| Package Description |
METAL CERAMIC PACKAGE-2
|
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOT439A
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Additional Feature |
DIFFUSED EMITTER BALLASTING RESISTORS
|
|
| Case Connection |
BASE
|
BASE
|
| Collector-Emitter Voltage-Max |
20 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Highest Frequency Band |
L BAND
|
L BAND
|
| JESD-30 Code |
R-CDFM-F2
|
S-CDFM-F2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
4
|
| Collector Current-Max (IC) |
|
12 A
|
| DC Current Gain-Min (hFE) |
|
10
|
| Power Dissipation-Max (Abs) |
|
583 W
|
| Power Gain-Min (Gp) |
|
7.8 dB
|
|
|
|
Compare MX0912B251Y,114 with alternatives
Compare MRF1150M with alternatives