MXPLAD36KP110A vs MXPLAD36KP110AE3 feature comparison

MXPLAD36KP110A Microsemi Corporation

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MXPLAD36KP110AE3 Microchip Technology Inc

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches 2 2
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 135 V
Breakdown Voltage-Min 122 V
Breakdown Voltage-Nom 128.5 V
Case Connection CATHODE
Clamping Voltage-Max 177 V
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 36000 W
Number of Elements 1
Number of Terminals 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 110 V
Reverse Current-Max 10 µA
Reverse Test Voltage 110 V
Surface Mount YES
Technology AVALANCHE
Terminal Form GULL WING
Terminal Position SINGLE

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