MXSMBJ10AE3
vs
SMBJ10-GT3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
SMBJ, 2 PIN
|
R-PDSO-C2
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| Breakdown Voltage-Max |
12.3 V
|
14.1 V
|
| Breakdown Voltage-Min |
11.1 V
|
11.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.38 W
|
|
| Reference Standard |
IEC-61000-4-2, 4-4, 4-5; MIL-19500
|
UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
10 V
|
10 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
2
|
2
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare MXSMBJ10AE3 with alternatives
Compare SMBJ10-GT3 with alternatives