NAND01GW3B2BZA6F vs NAND01GW3A1BZA6 feature comparison

NAND01GW3B2BZA6F Numonyx Memory Solutions

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NAND01GW3A1BZA6 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code BGA BGA
Package Description TFBGA, BGA63,10X12,32 BGA,
Pin Count 63 63
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25000 ns 12000 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 11 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Sectors/Size 1K
Number of Terminals 63 63
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 128MX8 128MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA BGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY
Page Size 2K words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 3 V 3 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Seated Height-Max 1.05 mm
Sector Size 128K
Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit NO
Type SLC NAND TYPE
Width 9 mm
Base Number Matches 1 4
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare NAND01GW3B2BZA6F with alternatives

Compare NAND01GW3A1BZA6 with alternatives